sot-89-3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., ltd sot-89-3l plastic-encapsulate transistors 2SD965 transistor (npn) features z low collector-emitter saturation voltage z large collector power dissipation and current z mini power type package 0 $ 5 . , 1 * : 965 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 7 v collector cut-off current i cbo v cb =10v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a h fe(1) v ce =2v, i c =1ma 200 h fe(2) v ce =2v, i c =500ma 230 800 dc current gain h fe(3) v ce =2v, i c =2a 150 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.1a 1 v transition frequency f t vce=6v,ic=50ma f=200mhz 150 mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz 50 pf classification of h fe ( 2 ) rank q r s range 230 C 380 340 C 600 560 C 800 symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 7 v i c collector current 5 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 167 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 www.cj-elec.com c,oct,2015
0.1 1 10 10 100 1 10 100 1000 100 1000 1 10 100 1000 1000 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 1 10 100 1000 10 100 10 100 1 10 100 1000 0.01 0.1 1 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 600 700 800 900 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5000 c ob c ib capacitance c (pf) reverse voltage v (v) 500 f=1mhz i e =0/ i c =0 t a =25 o c v cb / v eb c ob / c ib ?? 20 base-emitter saturation voltage v besat (mv) collector current i c (ma) t a =25 t a =100 2000 5000 i c v besat ?? =30 0.6 100 i c h fe ?? t a =100 o c t a =25 o c v ce =2v dc current gain h fe collector current i c (ma) 5000 base-emmiter voltage v be (mv) collcetor current i c (ma) v ce =2v t a =100 o c t a =25 i c v be ?? 2 500 i c f t ?? v ce =6v t a =25 o c transition frequency f t (mhz) collector current i c (ma) 0.3 0.3 i c v cesat ?? collector current i c (ma) collector-emitter saturation voltage v cesat (v) t a =25 t a =100 5000 =30 common emitter t a =25 1.8ma 1.6ma 1.4ma 1.2ma 1ma 0.8ma 0.6ma 0.4ma i b =0.2ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) ambient temperature t a ( ) collector power dissipation p c (w) p c ?? t a typical characteristics www.cj-elec.com 2 www.cj-elec.com c,oct,2015 b,feb,2013
min m a x min m a x a 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 6 2 7 / 3 d f n d j h 2 x w o l q h ' l p h q v l r q v 6 2 7 / 6 x j j h v w h g 3 d g / d \ r x w www.cj-elec.com 3 www.cj-elec.com c,oct,2015
6 2 7 / 7 d s h d q g 5 h h o www.cj-elec.com 4 www.cj-elec.com c,oct,2015
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